Manufacturing NAND memory is getting more complex as the technology scales, or moves to smaller and smaller manufacturing lithography nodes. Charge-Trap Device NAND is anticipated to replace the current mainstream Floating Gate NAND technology and Numonyx’s experience in NOR Flash-based technology should contribute greatly to this evolution. Moreover, memory suppliers in the next five years will need to have a deeper understanding of the device physics and overall memory system level solutions to overcome the challenges.
Effective utilization of
Numonyx’s software expertise will help in this effort and make a
positive impact in market penetration and increasing market share for
integrated NAND solutions such as MicroSD, eMMC, and SSD. The synergies
between Hynix and Numonyx, combined with Numonyx’s 40 year legacy of
solving difficult non-volatile memory challenges, and experience
developing firmware, microcontroller and other system solutions will be
key factors in helping to solve the limitations of the
technology–moving NAND from raw silicon to systems.
In addition to the collaboration on NAND, the companies also currently
have a joint manufacturing initiative for the production of 300 mm low
power mobile DRAM in their Chinese Wuxi joint venture. Mobile DRAM,
commonly stacked with non-volatile memory in multi-chip packages is
used by both companies in solutions for mobile devices. This
collaboration on mobile DRAM will allow both companies to ship more
cost effective, low power multi-chip memory subsystems to customers
requiring small form factors.
With the introduction of world’s fastest
1 Gb LPDDR2 product in April, Hynix is now the industry leader in
mobile DRAM products in terms of product diversity, technology
leadership, performance, and compatibility with SDR/DDR interfaces
allowing for single chip solutions.
